In-situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement
- 期刊名称IEEE Transactions on Industrial Electronics
- 作者Pu, Shi; Ugur, Enes; Yang, Fei; Wang, Gangyao; Akin, Bilal
- 印刷ISSN0278-0046
- 电子ISSN1557-9948
- 文件大小8837.22KB
- 发表时间2019
- DOI10.1109/TIE.2019.2924600
- 页码1-1
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