ZrO2 Ferroelectric FET for Non-volatile Memory Application
- 期刊名称IEEE Electron Device Letters
- 作者Liu, Huan; Wang, Chengxu; Han, Genquan; Li, Jing; Peng, Yue; Liu, Yan; Wang, Xingsheng; Zhong, Ni; Duan, Chungang; Wang, Xinran; Xu, Nuo; Liu, Tsu-Jae King; Hao, Yue
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小751.81KB
- 发表时间2019
- DOI10.1109/LED.2019.2930458
- 页码1-1
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