Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures
- 期刊名称Journal of Communications Technology and Electronics
- 作者Iakovleva, N. I.
- 卷第64卷
- 期第3期
- 印刷ISSN1064-2269
- 电子ISSN1555-6557
- 文件大小463.65KB
- 发表时间2019-3
- DOI10.1134/S1064226919030215
- 页码330-333
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