[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories
Woo, Changbeom; Kim, Shinkeun; Park, Jaeyeol; Lee, Dongiun; Kang, Myounggon; Jeon, Jongwook; Shin, Hyungcheol
- 作者Woo, Changbeom; Kim, Shinkeun; Park, Jaeyeol; Lee, Dongiun; Kang, Myounggon; Jeon, Jongwook; Shin, Hyungcheol
- 文件大小354.28KB
- 发表时间2019
- DOI10.1109/EDTM.2019.8731083
- 页码261-263