Formation of a functional homo-junction interface through ZnO atomic layer passivation: Enhancement of carrier mobility and threshold voltage in a ZnO nanocrystal field effect transistor

Kim, Youngjun; Chang, Mincheol; Cho, Seongeun; Kim, Minkyong; Kim, Hyunsik; Choi, Eunsoo; Ko, Hyungduk; Hwang, Jinha; Park, Byoungnam

期刊名称Journal of Alloys and Compounds
作者Kim, Youngjun; Chang, Mincheol; Cho, Seongeun; Kim, Minkyong; Kim, Hyunsik; Choi, Eunsoo; Ko, Hyungduk; Hwang, Jinha; Park, Byoungnam
卷第804卷
印刷ISSN0925-8388
文件大小406.86KB
发表时间2019-10
DOI10.1016/j.jallcom.2019.06.352
页码213-219

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