Boltzmann transport equation-based semi-classical drain current model for bilayer GFET including scattering effects
- 期刊名称IET Circuits, Devices & Systems
- 作者Bardhan, Sudipta; Sahoo, Manodipan; Rahaman, Hafizur
- 卷第13卷
- 期第4期
- 印刷ISSN1751-858X
- 电子ISSN1751-8598
- 文件大小2994.07KB
- 发表时间2019-07-01
- DOI10.1049/iet-cds.2018.5104
- 页码456-464
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