Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO2 Schottky diodes on Pt–Si substrates
- 期刊名称Journal of Materials Science: Materials in Electronics
- 作者Yu, Shihui; Zhang, Chunmei; Yang, Pan; Wu, Muying; Sun, Yongtao; Li, Lingxia
- 印刷ISSN0957-4522
- 电子ISSN1573-482X
- 文件大小2012.44KB
- 发表时间2019-9-13
- DOI10.1007/s10854-019-02183-2
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