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Fabricating GaN-based LEDs on (−2 0 1)
<i>β</i>
-Ga
<sub/>2</sub>
O
<sub/>3</sub>
substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

Fabricating GaN-based LEDs on (−2 0 1) β -Ga ₂ O ₃ substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

Lan, Yu-Pin; Chen, Yen-Chun; Yeh, Yi-Yun; Hung, Shun-Ming

期刊名称Japanese Journal of Applied Physics
作者Lan, Yu-Pin; Chen, Yen-Chun; Yeh, Yi-Yun; Hung, Shun-Ming
卷第58卷
期第10期
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小1153.77KB
发表时间2019-10-01
DOI10.7567/1347-4065/ab3ff5

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