A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination

• 期刊名称IEEE Journal of the Electron Devices Society
• 作者Li, Shuai; Wang, Mingxiang; Zhang, Dongli; Wang, Huaisheng; Shan, Qi
• 卷第7卷
• 电子ISSN2168-6734
• 文件大小2318.43KB
• 发表时间2019
• DOI10.1109/jeds.2019.2946383
• 页码1063-1071