Post-deposition annealing effect on the structural, morphological, and photoluminescence properties of β-Ga2O3 nanowires deposited on silicon by glancing angle deposition
- 期刊名称Applied Physics A
- 作者Meitei, Shagolsem Romeo; Singh, Naorem Khelchand
- 卷第125卷
- 期第11期
- 印刷ISSN0947-8396
- 电子ISSN1432-0630
- 文件大小1399.79KB
- 发表时间2019-11
- DOI10.1007/s00339-019-3075-x
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