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[IEEE 2019 IEEE 31st International Conference on Microelectronics (MIEL) - Nis, Serbia (2019.9.16-2019.9.18)] 2019 IEEE 31st International Conference on Microelectronics (MIEL) - Modelling of ΔV
              <sub/>T</sub>
              in NBT Stressed P-Channel Power VDMOSFETs

[IEEE 2019 IEEE 31st International Conference on Microelectronics (MIEL) - Nis, Serbia (2019.9.16-2019.9.18)] 2019 IEEE 31st International Conference on Microelectronics (MIEL) - Modelling of ΔV T in NBT Stressed P-Channel Power VDMOSFETs

Mitrovic, N.; Dankovic, D.; Prijic, Z.; Stojadinovic, N.
  • 作者Mitrovic, N.; Dankovic, D.; Prijic, Z.; Stojadinovic, N.
  • 文件大小804.13KB
  • 发表时间2019
  • DOI10.1109/MIEL.2019.8889584
  • 页码177-180
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