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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Investigation of Electronic Properties of Mo
              <sub/>x</sub>
              W
              <sub/>1–x</sub>
              S
              <sub/>2</sub>
              Alloy by Tight-binding Method for Interband transition

[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Investigation of Electronic Properties of Mo x W 1–x S 2 Alloy by Tight-binding Method for Interband transition

Tsai, Tsung-Yin; Chen, Pin-Fang; Chang, Shu-Wei; Wu, Yuh-Renn
  • 作者Tsai, Tsung-Yin; Chen, Pin-Fang; Chang, Shu-Wei; Wu, Yuh-Renn
  • 文件大小433.83KB
  • 发表时间2019
  • DOI10.1109/NUSOD.2019.8806790
  • 页码121-122
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