[IEEE 2019 19th International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2019.6.6-2019.6.7)] 2019 19th International Workshop on Junction Technology (IWJT) - Aspects of Highly-channeled MeV Implants of Dopants in Si(100)
- 作者Current, Michael; Hobler, Gerhard; Kawasaki, Yoji
- 文件大小10477.11KB
- 发表时间2019
- DOI10.23919/iwjt.2019.8802900
- 页码1-6
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