[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - 22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options
Gallagher, W.J.; Lee, George; Shih, Yi-Chun; Lee, Chia-Fu; Lee, Po-Hao; Wang, Roger; Shen, Kuei- Hung; Wu, J. J.; Wang, Wayne; Chuang, Harry; Chien, Eric; Chiang, Tien-Wei; Huang, Jian-Cheng; Shih, Meng-Chun; Wang, C.Y.; Weng, Chih-Hui; Chen, Sean; Bair, Christine
- 作者Gallagher, W.J.; Lee, George; Shih, Yi-Chun; Lee, Chia-Fu; Lee, Po-Hao; Wang, Roger; Shen, Kuei- Hung; Wu, J. J.; Wang, Wayne; Chuang, Harry; Chien, Eric; Chiang, Tien-Wei; Huang, Jian-Cheng; Shih, Meng-Chun; Wang, C.Y.; Weng, Chih-Hui; Chen, Sean; Bair, Christine
- 文件大小2289.59KB
- 发表时间2019
- DOI10.1109/IEDM19573.2019.8993469