HgCdTe-Based 640 Ã 512 Matrix Midwave Infrared Photodetector

Marchishin, I. V.; Sabinina, I. V.; Sidorov, G. Yu.; Yakushev, M. V.; Varavin, V. S.; Remesnik, V. G.; Predein, A. V.; Dvoretsky, S. A.; Vasilâev, V. V.; Sidorov, Yu. G.; Marin, D. V.; Kovchavtsev, A. P.; Latyshev, A. V.

期刊名称Journal of Communications Technology and Electronics
作者Marchishin, I. V.; Sabinina, I. V.; Sidorov, G. Yu.; Yakushev, M. V.; Varavin, V. S.; Remesnik, V. G.; Predein, A. V.; Dvoretsky, S. A.; Vasilâev, V. V.; Sidorov, Yu. G.; Marin, D. V.; Kovchavtsev, A. P.; Latyshev, A. V.
卷第65卷
期第3期
印刷ISSN1064-2269
电子ISSN1555-6557
文件大小863.39KB
发表时间2020-3
DOI10.1134/S1064226920030122
页码316-320

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HgCdTe-Based 640 Ã 512 Matrix Midwave Infrared Photodetector

HgCdTe-Based 640 Ã 512 Matrix Midwave Infrared Photodetector