[IEEE 2020 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2020.2.16-2020.2.20)] 2020 IEEE International Solid- State Circuits Conference - (ISSCC) - 13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique
Huh, Hwang; Cho, Wanik; Lee, Jinhaeng; Noh, Yujong; Park, Yongsoon; Ok, Sunghwa; Kim, Jongwoo; Cho, Kayoung; Lee, Hyunchul; Kim, Geonu; Park, Kangwoo; Kim, Kwanho; Lee, Heejoo; Chai, Sooyeol; Kwon, Chankeun; Cho, Hanna; Jeong, Chanhui; Yang, Yujin; Goo, Jayoon; Park, Jangwon; Lee, Juhyeong; Kirr, Heonki; Jo, Kangwook; Park, Cheoljoong; Nam, Hyeonsu; Song, Hyunseok; Lee, Sangkyu; Jeong, Woopyo; Ahn, Kun-Ok; Jung, Tae-Sung
- 作者Huh, Hwang; Cho, Wanik; Lee, Jinhaeng; Noh, Yujong; Park, Yongsoon; Ok, Sunghwa; Kim, Jongwoo; Cho, Kayoung; Lee, Hyunchul; Kim, Geonu; Park, Kangwoo; Kim, Kwanho; Lee, Heejoo; Chai, Sooyeol; Kwon, Chankeun; Cho, Hanna; Jeong, Chanhui; Yang, Yujin; Goo, Jayoon; Park, Jangwon; Lee, Juhyeong; Kirr, Heonki; Jo, Kangwook; Park, Cheoljoong; Nam, Hyeonsu; Song, Hyunseok; Lee, Sangkyu; Jeong, Woopyo; Ahn, Kun-Ok; Jung, Tae-Sung
- 文件大小322.08KB
- 发表时间2020
- DOI10.1109/ISSCC19947.2020.9063117
- 页码220-221