![[IEEE 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Phoenix, AZ, USA (2017.1.15-2017.1.18)] 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS]()
[IEEE 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Phoenix, AZ, USA (2017.1.15-2017.1.18)] 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOSChen, Cuilin; Xu, Xiao; Yang, Xin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko · 2017