Die Lebensdauer der Heliumzustände
- 作者J. Bakos; J. Szigeti
- 卷第21卷
- 期第2期
- 印刷ISSN0001-6705
- 文件大小741.27KB
- 发表时间1966-10
- DOI10.1007/bf03157462
- 页码149-167
Temperature dependent in situ doping of ALD ZnOZs. Baji; Z. Lábadi; Z. E. Horváth; M. Fried; B. Szentpáli; I. Bársony · 2011
GaAs planar doped barrier diodesB. Szentpáli; Vo Van Tuyen; G. Constantinidis; M. Lagadas · 2001
Optimization of the heat treatment for forming AuGe based contacts to n-GaAsT. Lalinský; P. Kordos; B. Kovács; I. Mojzes; B. Szentpáli; A. Tichy-Rácz · 1985
A review article on the transport properties in fatfets upon irradiationP. C. Euthymiou; C. D. Kourkoutas; B. Szentpáli; B. Kovács; K. Somogyi; P. C. Banbury; G. E. Zardas; G. E. Giakoumakis · 1994
Measurement techniques for the determination of doping and mobility profiles in GaAs epitaxial layersB. Szentpáli; B. Kovács; F. Riesz; V. V. Tuyen · 1994
Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctionsZs.J. Horváth; G. Molnár; B. Kovács; G. Petö; M. Andrási; B. Szentpáli · 1993
A novel mesfet-compatible gaas optoelectronic switchFerenc Riesz; B. Szentpáli; P. Gottwald; M. Németh-Sallay · 1992