Relaxation and force constants near fcc transition metal surfacesG. Allan · 1979

Influence of Self-Consistency on the Relaxation near a Vacancy or a Surface in Transition MetalsG. Allan; M. Lannoo · 1976

Surface relaxation of the (001) face of fcc transition metals with a nearly filled <i>d</i> bandPiveteau, B.; Spanjaard, D.; Desjonquères, M. C. · Physical Review B · 1994

Theoretical descriptions of porous siliconC. Delerue; M. Lannoo; G. Allan; E. Martin · 1995

Quantum confinement in amorphous silicon layersG. Allan; C. Delerue; M. Lannoo · 1997

Optical band gap of Si nanoclustersC. Delerue; G. Allan; M. Lannoo · 1998

Formation energy of vacancies in transition metalsM. Lannoo; G. Allan · 1970

Formation energy of vacancies in transition metalsM. Lannoo; G. Allan · 1971

Theory of the formation of Schottky barriersM. Lannoo; G. Allan · 1993

Electronic structure of crystalline InP oxidesE.A. Albanesi; S.J. Sferco; I. Lefebvre; G. Allan; M. Lannoo · 1993