New structure GaP—GaAlP heterojunction cold cathode
- 作者Hirofumi Kan; Nakamura, T.; Katsuno, H.; Hagino, M.; Sukegawa, T.
- 卷第26卷
- 期第11期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1200.88KB
- 发表时间1979
- DOI10.1109/t-ed.1979.19682
- 页码1759-1766
同作者推荐
Incremental stress effects in transistorsR.H. Mattson; L.D. Yau; J.R. DuBois · 1967
Arguments for electron conduction in silicon nitrideYau, L.D. · IEEE Electron Device Letters · 1984
On the ‘excess white noise’ in MOS transistorsL.D. Yau; C.T. Sah · 1969
Scaling of surface-channel charge-coupled devicesYau, L.D. · 1976
Quenched-in centers in silicon p+n junctionsL.D. Yau; C.T. Sah · 1974
Scaling of surface-channel charge-coupled devicesYau, L.D. · 1976
Applications of the electron beam exposure systemPease, R.F.W.; Ballantyne, J.P.; Henderson, R.C.; Voshchenkov, A.M.; Yau, L.D. · 1975