[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO<inf>2</inf> prepared by ALDStoklas, R.; Gregusova, D.; Blaho, M.; Cico, K.; Frohlich, K.; Novak, J.; Kordos, P. · 2014