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Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): thermodynamic and kinetic aspects

Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): thermodynamic and kinetic aspects

R. Heckingbottom; G.J. Davies; K.A. Prior

作者R. Heckingbottom; G.J. Davies; K.A. Prior
卷第132卷
印刷ISSN0167-2584
文件大小57.11KB
发表时间1983
DOI10.1016/0167-2584(83)90168-8

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