Fällungsanalyse im Mikrogrammbereich. II
- 作者Herbert Weisz; Peter Koch
- 卷第83卷
- 印刷ISSN0026-3672
- 电子ISSN1436-5073
- 文件大小280.30KB
- 发表时间1984
- DOI10.1007/bf01207077
- 页码311-316
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Investigation of cadmium-donor pairs in siliconN. Achtziger; S. Deubler; D. Forkel; H. Wolf; W. Witthuhn · 1989
Investigation of cadmium-hydrogen complexes in siliconM. Gebhard; N. Achtziger; A. Baurichter; D. Forkel; B. Vogt; W. Witthuhn · 1991
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Radiotracer spectroscopy of deep levels in the semiconductor band gapN. Achtziger; J. Grillenberger; W. Witthuhn · 1999
Complex formation at indium donors in p-CdTeU. Reislöhner; N. Achtziger; M. Rüb; W. Witthuhn · 1996
Annealing behaviour of In impurities in SiC after ion implantationJ. Meier; N. Achtziger; T. Licht; M. Uhrmacher; W. Witthuhn · 1993
Truss topology optimization including bar properties different for tension and compressionW. Achtziger · Structural and Multidisciplinary Optimization · 1996
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Optimization of singular problemsA. S. Hoback · Structural and Multidisciplinary Optimization · 1996
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Forthcoming papersStructural and Multidisciplinary Optimization · 1996