![Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1−x/Al2O3 interfaces for CBRAM applications]()
Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1−x/Al2O3 interfaces for CBRAM applicationsDe Stefano, Francesca; Afanas’ev, Valeri V.; Houssa, Michel; Goux, Ludovic; Opsomer, Karl; Jurczak, Małgorzata; Stesmans, Andre · Microelectronic Engineering · 2014