Ni-Si mixing: A new model for low temperature silicide formation
- 作者E.J. Van Loenen; J.F. Van Der Veen; F.K. LeGoues
- 卷第157卷
- 期第1期
- 印刷ISSN0167-2584
- 文件大小45.24KB
- 发表时间1985
- DOI10.1016/0167-2584(85)91073-4
Electron distribution of nickel particles encaged in X-zeoliteD. Fargues; F. Vergand; E. Belin; C. Bonnelle; D. Olivier; L. Bonneviot; M. Che · 1981
Electron distribution of nickel particles encaged in x-zeoliteD. Fargues; F. Vergand; E. Belin; C. Bonnelle; D. Olivier; L. Bonneviot; M. Che · 1981
Electron distributions for thin Ni Film−MgF2 interfaces by electron induced X-ray emissionB. Iraqi; F. Vergand; D. Fargues; C. Bonnelle · 1985
Nickel 3d electron distribution of small particles embedded in SiO and of bulk nickel-SiO interfaceD. Fargues; F. Vergand; C. Bonnelle · 1985
Nickel 3d electron distribution of small particles embedded in SiO and of bulk nickel-SiO interfaceD. Fargues; F. Vergand; C. Bonnelle · 1985
Electron distributions for thin Ni film-MgF2 interfaces by electron induced X-ray emissionB. Iraqi; F. Vergand; D. Fargues; C. Bonnelle · 1985
Electron distributions at bulk nickel-solid interfaces examined by electron induced X-ray emission spectroscopyD. Fargues; F. Vergand; C. Bonnelle · 1985