Ordering and layer composition at the Cu3Au(110) surface
- 作者E.G. McRae; T.M. Buck; R.A. Malic; W.E. Wallace; J.M. Sanchez
- 卷第238卷
- 文件大小460.91KB
- 发表时间1990
- DOI10.1016/0039-6028(90)90059-h
The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si <sub/>0.7</sub> Ge <sub/>0.3</sub> films by rapid thermal chemical vapor depositionLi, Jiun-Yun; Huang, Chiao-Ti; Sturm, James C. · Applied Physics Letters · 2012
[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Extremely Sharp Phosphorus Turn-Off Slope and Effect of Hydrogen on Phosphorus Surface Segregation in Epitaxially-Grown Relaxed Si0.7Ge0.3 by RTCVDLi, Jiun-Yun; Huang, Chiao-Ti; Sturm, James C. · 2012
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Magnetism-induced surface reconstructionT Teraoka; Y Tabata · 1992
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