![SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - <title>Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications</title>]()
SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - <title>Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications</title>Mikhailova, Maya P.; Baranov, Alexej N.; Imenkov, Albert N.; Yakovlev, Yury P.; Razeghi, Manijeh · 1991