![[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Rugged surface poly-Si electrode and low temperature deposited Si/sub 3/N/sub 4/ for 64 Mbit and beyond STC DRAM cell]()
[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Rugged surface poly-Si electrode and low temperature deposited Si/sub 3/N/sub 4/ for 64 Mbit and beyond STC DRAM cellYoshimaru, M.; Miyano, J.; Inoue, N.; Sakamoto, A.; You, S.; Tamura, H.; Ino, M. · 1990