![Formation of SiGe and SiGeC Layers on Si by Ge and C Ion Implantation and Subsequent Ion-Beam-Induced Epitaxial Crystallization]()
Formation of SiGe and SiGeC Layers on Si by Ge and C Ion Implantation and Subsequent Ion-Beam-Induced Epitaxial CrystallizationKobayashi, Naoto; Hasegawa, Masataka; Phillips, J.R.; Hayashi, Nobuyuki; Tanoue, Hisao; Shibata, Hajime; Makita, Yunosuke · MRS Proceedings · 1993