Preface
- 作者Alessandro Borghesi; Ulrich Gösele; Jan Vanhellemont
- 卷第36卷
- 印刷ISSN0921-5107
- 文件大小37.88KB
- 发表时间1996
- DOI10.1016/0921-5107(96)80002-x
Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressuresS.F. Yoon; Y.B. Miao; K. Radhakrishnan · 1996
A photoluminescence and X-ray diffraction analysis of InAlAs/InP heterostructures grown by molecular beam epitaxyS.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan · 1995
Mobility enhancement in MBE-grown InxGa1−xAs/In0.52Al0.48As modulation-doped heterostructuresS.F. Yoon; Y.B. Miao; K. Radhakrishnan; H.L. Duan · 1996
Photoluminescence characteristics of Si-doped In0.52Al0.48As grown on InP substrates by molecular beam epitaxyS.F. Yoon; Y.B. Miao; K. Radhakrishnan · 1995
On factors affecting alloy clustering in In0.52Al0.48As layers grown on InP substrates by molecular beam epitaxyS.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan · 1995
Effects of substrate temperature and V/III flux ratio on the growth of InAIAs on InP substrates by molecular beam epitaxyS.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan · 1994
Optical and structural characterizations for optimized growth of In0.52Al0.48As on InP substrates by molecular beam epitaxyS.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan · 1995