![[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Luminescence properties of Ge-implanted SiO<inf>2</inf> layer on Si substrate for blue-UV light source with low-voltage drive]()
[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Luminescence properties of Ge-implanted SiO<inf>2</inf> layer on Si substrate for blue-UV light source with low-voltage driveArai, Nobutoshi; Harada, Masatomi; Kotaki, Hiroshi; Takahashi, Akira; Miyagawa, Go; Kinoshita, Shohei; Tsuji, Hiroshi; Gotoh, Yasuhito · 2012