Synthetic Inorganic Materials
- 作者J. M. Garcés; A. Kuperman; D. M. Millar; M. M. Olken; A. J. Pyzik; W. Rafaniello
- 卷第12卷
- 期第23期
- 印刷ISSN0935-9648
- 电子ISSN1521-4095
- 文件大小764.69KB
- 发表时间2000
- DOI10.1002/1521-4095(200012)12:23<1725::aid-adma1725>3.0.co;2-0
- 页码1725-1735
[IEEE 2012 15th International Workshop on Computational Electronics (IWCE) - Madison, WI, USA (2012.05.22-2012.05.25)] 2012 15th International Workshop on Computational Electronics - Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMTPadmanabhan, Balaji; Vasileska, Dragica; Goodnick, Stephen M. · 2012
[Power Electronics and Power Systems] Power GaN Devices || GaN-Based Nanowire TransistorsMeneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico · 2017
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ZnO spintronics and nanowire devicesS. J. Pearton; D. P. Norton; Y. W. Heo; L. C. Tien; M. P. Ivill; Y. Li; B. S. Kang; F. Ren; J. Kelly; A. F. Hebard · 2006
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