On modelling thermal oxidation of Silicon II: numerical aspects

• 作者Vinay S. Rao; Thomas J. R. Hughes; Krishna Garikipati
• 卷第47卷
• 印刷ISSN0029-5981
• 电子ISSN1097-0207
• 文件大小900.44KB
• 发表时间2000
• DOI10.1002/(sici)1097-0207(20000110/30)47:1/3<359::aid-nme775>3.0.co;2-7
• 页码359-377