![Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping]()
Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN cappingLu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lee, Yao-Jen · Applied Physics Letters · 2007