A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters
- 作者Seonghearn Lee; Hyun Kyu Yu
- 卷第48卷
- 期第4期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小120.19KB
- 发表时间2001
- DOI10.1109/16.915726
- 页码784-788
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