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<![CDATA[Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass]]>Xuejie Shi, ; Henttinen, K.; Suni, T.; Suni, I.; Lau, S.S.; Man Wong, · 2003
On the threshold voltage of metal–oxide–semiconductor field-effect transistorsXuejie Shi; Man Wong · 2005
Formation of silicon on plasma synthesized SiOxNy and reaction mechanismMing Zhu; Xuejie Shi; Peng Chen; Weili Liu; Man Wong; Chenglu Lin; Paul K. Chu · 2005
On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon bodyMan Wong; Xuejie Shi · 2004
Effects of substrate doping on the linearly extrapolated threshold voltage of symmetrical DG MOS devicesXuejie Shi; Man Wong · 2005
Analytical I-V relationship incorporating field-dependent mobility for a symmetrical DG MOSFET with an undoped bodyMan Wong; Xuejie Shi · 2006
Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation techniqueXuejie Shi, ; Henttinen, K.; Suni, T.; Suni, I.; Man Wong, · IEEE Electron Device Letters · 2005