Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

T. Paskova; P.P. Paskov; E.M. Goldys; E. Valcheva; V. Darakchieva; U. Södervall; M. Godlewski; M. Zielinski; S. Hautakangas; K. Saarinen; C.F. Carlström; Q. Wahab; B. Monemar

作者T. Paskova; P.P. Paskov; E.M. Goldys; E. Valcheva; V. Darakchieva; U. Södervall; M. Godlewski; M. Zielinski; S. Hautakangas; K. Saarinen; C.F. Carlström; Q. Wahab; B. Monemar
卷第273卷
印刷ISSN0022-0248
文件大小676.56KB
发表时间2004
DOI10.1016/j.jcrysgro.2004.09.025
页码118-128

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Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy