Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology
- 作者S. H. Park; Y. G. Kim; H. H. Ji; H. D. Lee; J. S. Kim; S. H. Baek; H. Chang; J. H. Lee; K. C. Kim; B. S. Song; H. K. Bae; M. O. Kim; H. S. Lee; Y. S. Kang; D. B. Kim
- 文件大小852.03KB
- 发表时间2004
- DOI10.1143/JJAP.43.1709
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