Gold as an investment
- 期刊名称Applied Earth Science
- 作者Coulson, Michael
- 卷第114卷
- 期第2期
- 印刷ISSN0371-7453
- 文件大小281.43KB
- 发表时间2005-06
- DOI10.1179/037174505X62802
- 页码122-128
Electrical-Equivalent van der Waals Gap for Two-Dimensional BilayersVaidya, Dhirendra; Lodha, Saurabh; Ganguly, Swaroop · Physical Review Applied · 2018
Plasma-assisted As implants for effective work function modulation of TiN/HfO <sub/>2</sub> gate stacks on germaniumKothari, Shraddha; Vaidya, Dhirendra; Nejad, Hasan; Variam, Naushad; Ganguly, Swaroop; Lodha, Saurabh · Applied Physics Letters · 2018
Improved n-channel Ge gate stack performance using HfAlO high- <i>k</i> dielectric for various Al concentrationsKothari, Shraddha; Joishi, Chandan; Ghosh, Sayantan; Biswas, Dipankar; Vaidya, Dhirendra; Ganguly, Swaroop; Lodha, Saurabh · Applied Physics Express · 2016
[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectricKothari, Shraddha; Joishi, Chandan; Biswas, Dipankar; Vaidya, Dhirendra; Ganguly, Swaroop; Lodha, Saurabh · 2015
[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Comparison of basis sets for efficient Ab-initio modeling of semiconductorsVaidya, Dhirendra; Lodha, Saurabh; Ganguly, Swaroop · 2017
[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Integrated modeling platform for High-k/alternate channel material heterostructure stacksVaidya, Dhirendra; Hegde, Arjun; Lodha, Saurabh; Ganguly, Swaroop; Nainani, Aneesh; Yoshida, Naomi; Guarini, Theresa · 2015
[IEEE ESSDERC 2015 - 45th European Solid-State Device Research Conference - Graz, Austria (2015.9.14-2015.9.18)] 2015 45th European Solid State Device Research Conference (ESSDERC) - Metal gate V<inf>T</inf> modulation using PLAD N<inf>2</inf> implants for Ge p-FinFET applicationsKothari, Shraddha; Joishi, Chandan; Vaidya, Dhirendra; Nejad, Hasan; Colombeau, Benjamin; Ganguly, Swaroop; Lodha, Saurabh · 2015
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013