[IEEE 2006 IEEE 8th International Conference on Properties and applications of Dielectric Materials - Bali, Indonesia (2006.06.26-2006.06.30)] 2006 IEEE 8th International Conference on Properties and applications of Dielectric Materials - Microstructure Simulation on Puncturing Phenomenon of ZnO Varistor under High Current
- 作者He, Jinliang; Hu, Jun; Chen, Qingheng
- 文件大小4459.93KB
- 发表时间2006
- DOI10.1109/icpadm.2006.284337
- 页码959-962
[IEEE CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD (May 18-23, 1997)] CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Microchip lasersZayhowski, J.J. · 1997
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Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrates with dynamically stable polarisationTakahashi, M.; Vaccaro, P.; Egami, N.; Mizutani, A.; Matsutani, A.; Koyama, F.; Iga, K. · Electronics Letters · 1998
[IEEE Technical Digest CLEO/Pacific Rim '97 Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan (14-18 July 1997)] Technical Digest CLEO/Pacific Rim '97 Pacific Rim Conference on Lasers and Electro-Optics - Polarization Characteristics Of Oxide Confinement Vertical-cavity Surface-emitting Lasers Grown On GaAs(311 ) A SubstratesTakahashi, M.; Egami, N.; Mizutani, A.; Koyama, F.; Iga, K. · 1997
[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (11-15 Aug. 1997)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C - Dynamically stable polarization characteristics of oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrateTakahashi, M.; Egami, N.; Mizutani, A.; Matsutani, A.; Koyama, F.; Iga, K. · 1997