![[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices]()
[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devicesBauer, M.; Machkauotsan, V.; Arena, C. · 2006