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dc and rf characteristics of self-aligned inversion-channel In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al[sub 2]O[sub 3]/Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as gate dielectrics

dc and rf characteristics of self-aligned inversion-channel In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al[sub 2]O[sub 3]/Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as gate dielectrics

Lin, T. D.; Chang, P.; Chiu, H. C.; Hong, M.; Kwo, J.; Lin, Y. S.; Hsu, Shawn S. H.
  • 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
  • 作者Lin, T. D.; Chang, P.; Chiu, H. C.; Hong, M.; Kwo, J.; Lin, Y. S.; Hsu, Shawn S. H.
  • 卷第28卷
  • 期第3期
  • 印刷ISSN1071-1023
  • 文件大小617.30KB
  • 发表时间2010
  • DOI10.1116/1.3276442
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