![[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Effects of inserting ultrathin TaO<inf>x</inf> layer in Pt/TiO<inf>2</inf> interface on resistive switching characteristics]()
[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Effects of inserting ultrathin TaO<inf>x</inf> layer in Pt/TiO<inf>2</inf> interface on resistive switching characteristicsWei, Guobin; Murakami, Hideki; Fujioka, Tomohiro; Ohta, Akio; Goto, Yuta; Higashi, Seiichiro; Miyazaki, Seiichi · 2011