[Lecture Notes in Electrical Engineering] Electronics and Signal Processing Volume 97 ||
- 作者Hu, Wensong
- 文件大小20239.38KB
- 发表时间2011
- DOI10.1007/978-3-642-21697-8
[Advanced Texts in Physics] Silicon Carbide Volume 5 ||Choyke, W. J.; Matsunami, H.; Pensl, G. · 2004
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[Advanced Texts in Physics] Silicon Carbide Volume 314 || Defect Migration and Annealing MechanismsChoyke, W. J.; Matsunami, H.; Pensl, G. · 2004
[Advanced Texts in Physics] Silicon Carbide || Ohmic Contacts for Power Devices on SiCChoyke, W. J.; Matsunami, H.; Pensl, G. · 2004
[Advanced Texts in Physics] Silicon Carbide Volume 900 || Vacancy Defects Detected by Positron AnnihilationChoyke, W. J.; Matsunami, H.; Pensl, G. · 2004
[Advanced Texts in Physics] Silicon Carbide || High Nitrogen Doping During Bulk Growth of SiCChoyke, W. J.; Matsunami, H.; Pensl, G. · 2004