![SPIE Proceedings [SPIE Material Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine (Monday 30 September 1996)] Material Science and Material Properties for Infrared Optoelectronics - <title>Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al<formula><inf><roman>0.5</roman></inf></formula>Ga<formula><inf><roman>0.5</roman></inf></formula>As heterostructures</title>]()
SPIE Proceedings [SPIE Material Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine (Monday 30 September 1996)] Material Science and Material Properties for Infrared Optoelectronics - <title>Light and electric field influence on resistivity and long-term relaxations of piezoresistivity in p-GaAs/Al<formula><inf><roman>0.5</roman></inf></formula>Ga<formula><inf><roman>0.5</roman></inf></formula>As heterostructures</title>Bogdanov, E. V.; Hansen, Ole P.; Kolokolov, Konstantin I.; Kravchenko, V. N.; Minina, N. Y.; Olsen, J. S.; Savin, A. M.; Sizov, Fiodor F.; Tetyorkin, Vladimir V. · 1997