Institutional capacity and policy for latecomer technology development
- 期刊名称International Journal of Technological Learning, Innovation and Development
- 作者Oyeyinka, Banji O.
- 卷第5卷
- 印刷ISSN1753-1942
- 电子ISSN1753-1950
- 文件大小268.96KB
- 发表时间2012
- DOI10.1504/ijtlid.2012.044878
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Compact Modeling of Experimental n- and p-Channel FinFETsJooyoung Song; Yu Yuan; Bo Yu; Weize Xiong; Yuan Taur · 2010
An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective massYu Yuan; Bo Yu; Jooyoung Song; Yuan Taur · 2009
Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETsJooyoung Song; Bo Yu; Weize Xiong; Yuan Taur · 2009
[IEEE 2008 IEEE Custom Integrated Circuits Conference - CICC 2008 - San Jose, CA, USA (2008.09.21-2008.09.24)] 2008 IEEE Custom Integrated Circuits Conference - Compact modeling of multiple-gate MOSFETsTaur, Yuan; Song, Jooyoung; Yu, Bo · 2008
[IEEE 2007 IEEE International SOI Conference - Indian Wells, CA, USA (2007.10.1-2007.10.4)] 2007 IEEE International SOI Conference - Experimental Hardware Calibrated Compact Models for 50nm n-channel FinFETsSong, Jooyoung; Yu, Bo; Xiong, W.; Hsu, C.H.; Cleavelin, C.R.; Ma, M.; Patruno, P.; Taur, Yuan · 2007