Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator
- 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- 作者Bak, Jun Yong; Yoon, Sung Min
- 卷第31卷
- 期第4期
- 印刷ISSN2166-2746
- 文件大小2136.86KB
- 发表时间2013
- DOI10.1116/1.4809996
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