![SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Silicon Photonics VI - <title>Phase change characteristics of Ge<formula><inf><roman>2</roman></inf></formula>Sb<formula><inf><roman>2</roman></inf></formula>Te<formula><inf><roman>5</roman></inf></formula> thin film for a self-holding optical gate switch</title>]()
SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Silicon Photonics VI - <title>Phase change characteristics of Ge<formula><inf><roman>2</roman></inf></formula>Sb<formula><inf><roman>2</roman></inf></formula>Te<formula><inf><roman>5</roman></inf></formula> thin film for a self-holding optical gate switch</title>Toyosaki, Tatsuya; Tanaka, Daiki; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Ikuma, Yuichiro; Tsuda, Hiroyuki; Kubby, Joel A.; Reed, Graham T. · 2011