XML schema validation using parsing expression grammars
- 期刊名称PeerJ PrePrints
- 作者Kimio Kuramitsu, Shin'ya Yamaguchi
- 卷第3卷
- 电子ISSN2167-9843
- 文件大小347.57KB
- 发表时间2015
- DOI10.7287/peerj.preprints.1503v1
Time dependent and temperature dependent properties of the forward voltage characteristic of InGaN high power LEDsFulmek, P. L.; Haumer, P.; Wenzl, F. P.; Nemitz, W.; Nicolics, J. · AIP Advances · 2017
The temperature dependence of the forward characteristics of 1N4007 silicon diodeOta, S. B.; Nanda, K. K. · Review of Scientific Instruments · 1994
Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiersK.H. Baik; Y. Irokawa; F. Ren; S.J. Pearton; S.S. Park; Y.J. Park · 2003
Analysis of temperature dependent forward characteristics of Ni/$(bar{2}01)$ <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> Schottky diodesJayawardena, Asanka; Ahyi, Ayayi C; Dhar, Sarit · Semiconductor Science and Technology · 2016
Temperature dependence of electrical characteristics for diamond Schottky-pn diode in forward biasOzawa, Naoto; Makino, Toshiharu; Kato, Hiromitsu; Ogura, Masahiko; Kato, Yukako; Takeuchi, Disuke; Okushi, Hideyo; Yamasaki, Satoshi · Diamond and Related Materials · 2018
Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodesMeyaard, David S.; Cho, Jaehee; Fred Schubert, E.; Han, Sang-Heon; Kim, Min-Ho; Sone, Cheolsoo · Applied Physics Letters · 2013
Determination of the charge transport mechanism inp-njunctions by analyzing temperature dependences of forward current-voltage characteristicsN. S. Grushko; A. V. Lakalin; A. I. Somov · 2008
Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward CharacteristicsKaji, Naoki; Niwa, Hiroki; Suda, Jun; Kimoto, Tsunenobu · IEEE Transactions on Electron Devices · 2015
Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier LifetimeKaji, Naoki; Niwa, Hiroki; Suda, Jun; Kimoto, Tsunenobu · Japanese Journal of Applied Physics · 2013
Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal OxidationKaji, Naoki; Niwa, Hiroki; Suda, Jun; Kimoto, Tsunenobu · Materials Science Forum · 2014
[IEEE 2014 14th International Workshop on Junction Technology (IWJT) - Shanghai, China (2014.5.18-2014.5.20)] 2014 International Workshop on Junction Technology (IWJT) - Ion implantation technology in SiC for power device applicationsKimoto, Tsunenobu; Kawahara, Koutaro; Niwa, Hiroki; Kaji, Naoki; Suda, Jun · 2014
Spectral Emissivity of SiliconSatō, Tsutomu · Japanese Journal of Applied Physics · 1967
Surface Acoustic Wave SensorsShiokawa, Showko; Kondoh, Jun · Japanese Journal of Applied Physics · 2004
Perspectives in SonochemistryAndo, Takashi; Kimura, Takahide · Japanese Journal of Applied Physics · 2003
Structurally Stable Hyperbolic BeamChakraborty, Rijuparna; Ghosh, Ajay · Japanese Journal of Applied Physics · 2009
Peierls Phase TransitionKagoshima, Seiichi · Japanese Journal of Applied Physics · 1981
Piezoelectric Tensor of KNbO <sub/>3</sub>Günter, P. · Japanese Journal of Applied Physics · 1977
Plasma Anodic Oxidation of InPFuyuki, Takashi; Moriuchi, Sohta; Matsunami, Hiroyuki · Japanese Journal of Applied Physics · 1983
Linearity Characteristics of Multiplier PhototubesNonaka, Mamoru; Kashima, Takeo · Japanese Journal of Applied Physics · 1963