[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Air spacer for 10nm FinFET CMOS and beyond
- 作者Cheng, K.; Park, C.; Yeung, C.; Nguyen, S.; Zhang, J.; Miao, X.; Wang, M.; Mehta, S.; Li, J.; Surisetty, C.; Muthinti, R.; Liu, Z.; Tang, H.; Tsai, S.; Yamashita, T.; Bu, H.; Divakaruni, R.
- 文件大小654.83KB
- 发表时间2016
- DOI10.1109/IEDM.2016.7838436
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